? semiconductor components industries, llc, 2002 january, 2002 rev. 2 1 publication order number: 1n4728a/d 1n4728a series 1 watt do-41 hermetically sealed glass zener voltage regulator diodes this is a complete series of 1 watt zener diode with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 3.3 v to 91 v ? esd rating of class 3 (>16 kv) per human body model ? do41 (do204al) package ? double slug type construction ? metallurgical bonded construction ? oxide passivated die mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l 50 c, lead length = 3/8 derated above 50 c p d 1.0 6.67 watt mw/ c operating and storage temperature range t j , t stg 65 to +200 c devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information (note 1.) 1n47xxa axial lead 2000 units/box 1n47xxarl axial lead axial lead case 5910 glass http://onsemi.com 6000/tape & reel cathode anode 1n47xxarl2 axial lead 6000/tape & reel 1n47xxata axial lead 4000/ammo pack 1n47xxata2 axial lead 4000/ammo pack 1. the a2o suffix refers to 26 mm tape spacing. l 1n 47 xxa yww l = assembly location 1n47xxa = device code y = year ww = work week
zener voltage regulator i f v i i r i zt v r v z v f 1n4728a series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max., i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i r surge current @ t a = 25 c electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max, i f = 200 ma for all types) zener voltage (3.)(4.) zener impedance (5.) leakage current jedec v z (volts) @ i zt z zt @i zt z zk @i zk i r @ v r i r (6.) jedec device (2.) min nom max (ma) ( ) ( ) (ma) ( m a max) (volts) (ma) 1n4728a 3.14 3.3 3.47 76 10 400 1 100 1 1380 1n4729a 3.42 3.6 3.78 69 10 400 1 100 1 1260 1n4730a 3.71 3.9 4.10 64 9 400 1 50 1 1190 1n4731a 4.09 4.3 4.52 58 9 400 1 10 1 1070 1n4732a 4.47 4.7 4.94 53 8 500 1 10 1 970 1n4733a 4.85 5.1 5.36 49 7 550 1 10 1 890 1n4734a 5.32 5.6 5.88 45 5 600 1 10 2 810 1n4735a 5.89 6.2 6.51 41 2 700 1 10 3 730 1n4736a 6.46 6.8 7.14 37 3.5 700 1 10 4 660 1n4737a 7.13 7.5 7.88 34 4 700 0.5 10 5 605 1n4738a 7.79 8.2 8.61 31 4.5 700 0.5 10 6 550 1n4739a 8.65 9.1 9.56 28 5 700 0.5 10 7 500 1n4740a 9.50 10 10.50 25 7 700 0.25 10 7.6 454 1n4741a 10.45 11 11.55 23 8 700 0.25 5 8.4 414 1n4742a 11.40 12 12.60 21 9 700 0.25 5 9.1 380 1n4743a 12.4 13 13.7 19 10 700 0.25 5 9.9 344 1n4744a 14.3 15 15.8 17 14 700 0.25 5 11.4 304 1n4745a 15.2 16 16.8 15.5 16 700 0.25 5 12.2 285 tolerance and type number designation 2. the jedec type numbers listed have a standard tolerance on the nominal zener voltage of 5%. specials available include: 3. nominal zener voltages between the voltages shown and tighter voltage tolerances. for detailed information on price, availabi lity, and delivery, contact your nearest on semiconductor representative. zener voltage (v z ) measurement 4. on semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. zener impedance (z z ) derivation 5. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10 % of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . surge current (i r ) non-repetitive 6. the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 squar e wave or equiv- alent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec registration; however, actual device capability is as described in figure 5 of the general data do-41 glass.
1n4728a series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max, i f = 200 ma for all types) (continued) zener voltage (8.)(9.) zener impedance (10.) leakage current jedec v z (volts) @ i zt z zt @i zt z zk @i zk i r @ v r i r (11.) jedec device (7.) min nom max (ma) ( ) ( ) (ma) ( m a max) (volts) (ma) 1n4746a 17.1 18 18.9 14 20 750 0.25 5 13.7 250 1n4747a 19.0 20 21.0 12.5 22 750 0.25 5 15.2 225 1n4748a 20.9 22 23.1 11.5 23 750 0.25 5 16.7 205 1n4749a 22.8 24 25.2 10.5 25 750 0.25 5 18.2 190 1n4750a 25.7 27 28.4 9.5 35 750 0.25 5 20.6 170 1n4751a 28.5 30 31.5 8.5 40 1000 0.25 5 22.8 150 1n4752a 31.4 33 34.7 7.5 45 1000 0.25 5 25.1 135 1n4753a 34.2 36 37.8 7 50 1000 0.25 5 27.4 125 1n4754a 37.1 39 41.0 6.5 60 1000 0.25 5 29.7 115 1n4755a 40.9 43 45.2 6 70 1500 0.25 5 32.7 110 1n4756a 44.7 47 49.4 5.5 80 1500 0.25 5 35.8 95 1n4757a 48.5 51 53.6 5 95 1500 0.25 5 38.8 90 1n4758a 53.2 56 58.8 4.5 110 2000 0.25 5 42.6 80 1n4759a 58.9 62 65.1 4 125 2000 0.25 5 47.1 70 1n4760a 64.6 68 71.4 3.7 150 2000 0.25 5 51.7 65 1n4761a 71.3 75 78.8 3.3 175 2000 0.25 5 56 60 1n4762a 77.9 82 86.1 3 200 3000 0.25 5 62.2 55 1n4763a 86.5 91 95.6 2.8 250 3000 0.25 5 69.2 50 1n4764a 95 100 105 2.5 350 3000 0.25 5 76 45 tolerance and type number designation 7. the jedec type numbers listed have a standard tolerance on the nominal zener voltage of 5%. specials available include: 8. nominal zener voltages between the voltages shown and tighter voltage tolerances. for detailed information on price, availabi lity, and delivery, contact your nearest on semiconductor representative. zener voltage (v z ) measurement 9. on semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. zener impedance (z z ) derivation 10. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 1 0% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . surge current (i r ) non-repetitive 11. the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 squa re wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec registration; however, actual device capability is as described in figure 5 of the general data do-41 glass. figure 1. power temperature derating curve t l , lead temperature ( c) p d 0 20 40 60 200 80 100 120 140 160 180 0.25 0.5 0.75 1 1.25 l = lead length to heat sink l = 3/8 l = 1/8 l = 1 , maximum steady state power dissipation (watts)
1n4728a series http://onsemi.com 4 figure 2. temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) a. range for units to 12 volts b. range for units to 12 to 100 volts +12 +10 +8 +6 +4 +2 0 -2 -4 23456789101112 v z , zener voltage (volts) q v z , temperature coefficient (mv/ c) 100 70 50 30 20 10 7 5 3 2 1 10 20 30 50 70 100 v z , zener voltage (volts) q v z , temperature coefficient (mv/ c) v z @i zt range range v z @i zt figure 3. typical thermal resistance versus lead length figure 4. effect of zener current 175 150 125 100 75 50 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 l, lead length to heat sink (inches) q jl , junctiontolead thermal resistance (mv/ c/w) q v z , temperature coefficient (mv/ c) +6 +4 +2 0 -2 -4 34 5678 v z , zener voltage (volts) v z @i z t a =25 c 20ma 0.01ma 1ma note: below 3 volts and above 8 volts note: changes in zener current do not note: effect temperature coefficients figure 5. maximum surge power 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 pw, pulse width (ms) this graph represents 90 percentile data points. for worst case design characteristics, multiply surge power by 2/3. p pk , peak surge power (watts) 11v-100v nonrepetitive 3.3v-10v nonrepetitive 5% duty cycle 10% duty cycle 20% duty cycle rectangular waveform t j =25 c prior to initial pulse
1n4728a series http://onsemi.com 5 v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) maximum 150 c 75 c 0 c 25 c figure 6. effect of zener current on zener impedance figure 7. effect of zener voltage on zener impedance figure 8. typical leakage current 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 100 v z , zener voltage (v) 35710 20305070 z z , dynamic impedance (ohms) 10000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 i r , leakage current ( m a) 3456789101112131415 v z , nominal zener voltage (volts) +25 c +125 c typical leakage current at 80% of nominal breakdown voltage t j = 25 c i z (rms) = 0.1 i z (dc) f = 60 hz 6.2 v 27 v v z = 2.7 v 47 v t j = 25 c i z (rms) = 0.1 i z (dc) f = 60 hz 20 ma 5 ma i z = 1 ma 0 v bias 1 v bias 400 300 200 100 50 20 10 8 4 1 2 5 10 20 50 100 v z , nominal v z (volts) c, capacitance (pf) 50% of breakdown bias minimum figure 9. typical capacitance versus v z figure 10. typical forward characteristics
1n4728a series http://onsemi.com 6 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found as follows: d t jl = q jl p d . q jl may be determined from figure 3 for dc power conditions. for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j . q vz , the zener voltage temperature coefficient, is found from figure 2. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 5 be exceeded.
1n4728a series http://onsemi.com 7 outline dimensions 1 watt do41 glass zener voltage regulator diodes axial leaded b d k k f f a dim min max min max millimeters inches a 4.10 5.20 0.161 0.205 b 2.00 2.70 0.079 0.106 d 0.71 0.86 0.028 0.034 f --- 1.27 --- 0.050 k 25.40 --- 1.000 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 59-04 obsolete, new standard 59-09. 4. 59-03 obsolete, new standard 59-10. 5. all rules and notes associated with jedec do-41 outline shall apply 6. polarity denoted by cathode band. 7. lead diameter not controlled within f dimension. glass d041 case 5910 issue r
1n4728a series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 1n4728a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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